Fabrication of high IcRn YBCO ramp junctions using Ga doped Pr-Ba-Cu-O barriers at 65 K

Yttrium Barium Copper Oxide ramp junctions have been fabricated via off-axis rf magnetron sputtering using Praseodymium Barium Copper Gallium Oxide as a barrier material. Optimal wafer processing conditions and junction behavior as a function of barrier thickness are presented. IcRn values of 500 microvolts at 65 K have been achieved with a two step deposition/anneal process using Praseodymium Barium Copper Gallium Oxide as the barrier. This junction process has been demonstrated on 2 inch wafers.