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Acemap > Paper > 極端に高い接合温度での1.2kV SiC MOSFETの電気特性評価【JST・京大機械翻訳】

極端に高い接合温度での1.2kV SiC MOSFETの電気特性評価【JST・京大機械翻訳】

2018 
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