Flip-chip high power led array and manufacturing method thereof

The invention discloses a high-power flip-chip array LED chip and a manufacturing method thereof. The high-power flip-chip array LED chip has a structure as follows: the array LED chip is formed by a plurality of array units, wherein two adjacent array units share the same n-type buffer layer (3); each array unit comprises a sapphire substrate (2) on which an n-type buffer layer (3), an n-type semiconductor layer (6), an active layer (7), a p-type semiconductor layer (8), a transparent electrode layer (9) and a p electrode layer (10) are covered in sequence; an n electrodes (5) are arranged between two adjacent array units; the n electrodes (5) and the p electrode layer (10) are coated with an insulating layer (4); and an external-connection metal heat dissipation layer (11) is covered on the openings of the p electrode layers (10). The light output surface of the sapphire substrate (2) is processed to be a roughened surface (1). The p electrode of the chip is made of silver or aluminum or other metals with higher light reflectivity.