Switching elements and memory device

Switching element of one embodiment of the present technology, it includes a first electrode, a second electrode arranged opposite to the first electrode, and a switch layer provided between the first electrode and the second electrode there. Switch layer is configured to include a chalcogen element. The switch layer, a first region of the first electrode near, in a second region of the second electrode closer than the first region, the composition ratio of the chalcogen elements, or the kind of chalcogen elements are different from each other.