The method of preparing a double charge injection layer for a semiconductor device

The present invention provides a method for preparing a double charge injection layer used in a semiconductor device, the step of the method is as follows: HAT-CN, and F4-TCNQ at a mass ratio of 1: (2-6) was dissolved in acetone in proportions until completely dissolved to obtain a solution as a; CuPc and MoO3 were dissolved in water to form an aqueous solution, stirred under atmospheric conditions, respectively, in a volume ratio of 1: 1 ratio, to obtain a solution B; ozone treatment of the substrate to be coated and the substrate surface, and at an annealing temperature 60 ℃ 15min, in which case the surface of the substrate form a greasy film a coating solution; solution B is coated on the surface of the oil film, and annealing at temperature 150 ℃ 15min in this case ITO substrate surface that formed a double charge injection layer for a semiconductor device. The present invention production process is simple and convenient, low equipment requirements, can be prepared by operating in atmospheric conditions, and low cost.