A Novel Fast Process for Zn(O,S) Buffer Layers, Doped With Al and B and Deposited on CIGSSe Solar Cells

In the search for a nontoxic replacement of the commonly employed CdS buffer layer for Cu(In,Ga)(S,Se) $_\mathrm{2}$ based solar cells, chemically deposited Zn(O,S) thin films are a most promising choice. In this paper, we address the usually slow deposition speed of Zn(O,S) in a newly developed ammonia-free chemical bath process, resulting in a deposition of 30 nm in 3 min with good homogeneity on 30 cm × 30 cm sized substrates. Solar cells with buffer layers prepared from this process match the efficiency of CdS reference cells. In a second step, we address the light-soaking post-treatment, still needed for maximum efficiencies. By addition of aluminum to the deposition process, the initial efficiencies can be increased slightly. With the addition of boron, the light-soaking post-treatment is rendered unnecessary, while maintaining high efficiencies above 15%, surpassing reference cells with CdS buffer.