Molecular beam epitaxy growth and properties of Co2TiSi thin films on GaAs(0 0 1): the effect of growth temperature

Molecular beam epitaxy growth of ferromagnetic Co2TiSi films on GasAs(0 0 1) substrates is presented and it is found that the optimum growth temperature is between 300–360 °C where the film is single phase and exhibits highly (0 0 1)-ordered crystal structure. The Co2TiSi films are ferromagnetic up to 300 K and the highest value of saturation magnetization obtained is of 0.8 μB per formula unit. The Co2TiSi films also exhibit a very low degree of magnetic anisotropy along in-plane crystallographic directions. Expected values of Seebeck coefficient and resistivity measured at room temperature confirm good stoichiometry of the Co2TiSi films and indicate that this material is a promising candidate for both spincaloric and spintronic applications.