锆钛酸锶钡陶瓷的电阻开关效应 The Resistance Switching Effect in (BaxSr1-x)(Zr0.1Ti0.9)O3 Ceramics

传统高温固相法制备的锆钛酸锶钡陶瓷为钙态矿结构，钡离子的掺杂会轻微影响样品的结构。从X-Ray衍射图谱可以看出，钡离子掺杂量的增加会使(220)峰逐渐向低角度移动，样品的晶格常数增加。所有的样品展现出较好的电阻开关效应。开关性能与之前大量报道的薄膜和晶体有着相似的优越性能，同时具有制作工艺更加简单、价格低这一特点。烧结的过程中极易产生氧空位，这可能是引起电阻开关效应的原因。我们通过对样品的阻抗进行拟合分析，并计算出活化能。得到的所有活化能都在1 eV到2 eV之间，证实了之前的猜测。锆钛酸锶钡陶瓷的电阻开关效应也为存储器器件的发展提供了更多的探索空间。 (BaxSr1-x)(Zr0.1Ti0.9)O3 ceramics were prepared by the traditional high temperature solid state reaction method and had a typical perovskite structure. The structure of the samples was influenced by Ba2+ doped. As shown by X-ray diffraction patterns, peaks (220) shift toward a low degree with the increasing of Ba2+ doped, implying that the lattice parameters increase with the increasing x. All of the samples showed a good resistive switching effect. The switching effect of the samples had a lot of specialties as good as thin film devices or single crystal devices, and the preparation process was simpler and had low cost. Oxygen vacancies were easy to be produced in the sintering process, and it might be the reason for inducing the resistive switching effect. We analyzed the impedance of the samples and calculated the activation energy (Ea). Ea values were between 1 to 2 eV, which confirmed what we suspected. The switching effect of(BaxSr1-x)(Zr0.1Ti0.9)O3 ceramics provides the possibility of new switching devices with the memory effect composed of ceramics.