Evidence of a two-dimensional to three-dimensional transition in Si δ-doped GaAs structures

We report on the change of character, from an «isolated» well to a superlattice, of multiple δ-doped structures as a function of the doping period d s . This effect is evidenced by the drastic change in the photoluminescence excitation spectra and the deviation on the total electron density extracted from Shubnikov-de Haas oscillation measurements as d s decreases. Self-consistent-calculation results performed for these systems are used for comparison