Old Web
English
Sign In
Acemap
>
Paper
>
Characteristics of tungsten gate devices for mos VLSIs
Characteristics of tungsten gate devices for mos VLSIs
1986
Naoki Yamamoto
H Kume
S. Iwata
K Yagi
N. Kobayashi
N Mori
H. Miyazaki
Keywords:
Metal gate
Electronic circuit
Tungsten
Transistor
Semiconductor device
Integrated circuit
Materials science
Electronic engineering
Electrode
Optoelectronics
Fabrication
Correction
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]