P-8: High Resolution a-IGZO TFT LCD Panel Fabricated with Lower Annealing Temperature

Shin-Chuan Chiang,Yu-Hsien Chen,Ya-Ju Lu,Der-Chun Wu,Po-Lung Chen,Kuo-Hsing Tseng,Wen-Cheng Lu,Yi-Hsien Lin,Ying-Hui Chen,En-Chih Lid,Chi-Young Wang,Hsi-Ming Chang,Li-Hsin Kang,Yen-Yu Huang

P-8: High Resolution a-IGZO TFT LCD Panel Fabricated with Lower Annealing Temperature

2014

Shin-Chuan Chiang
Yu-Hsien Chen
Ya-Ju Lu
Der-Chun Wu
Po-Lung Chen
Kuo-Hsing Tseng
Wen-Cheng Lu
Yi-Hsien Lin
Ying-Hui Chen
En-Chih Lid
Chi-Young Wang
Hsi-Ming Chang
Li-Hsin Kang
Yen-Yu Huang

In this paper, a-IGZO TFT fabricated with sputtered process and annealed with low temperature is investigated. For all the prcoess, the maximum process temperature is as low as 300°C In addition, a 3.8 inch WVGA AM-LCD driven by a-IGZO TFTs is successfully demonstrated.

Keywords:

Annealing (metallurgy)
Thin-film transistor
Electronic engineering
Liquid-crystal display
Materials science
Optoelectronics
high resolution

Correction
Source
Cite
Save
Machine Reading By IdeaReader

References

Citations