Investigation of CuInZnSe2 thin films for solar cell applications

Abstract We investigated the preparation of (CuInSe 2 ) 1− X (2ZnSe) X (CIZSe) thin films with different composition of zinc (0.0≤ X ≤0.42) using a two-stage technological process—evaporation of ZnSe, Cu and In components and subsequent selenization in a quartz tube (under N 2 flow at atmospheric pressure). XRD measurements showed that phase formation in CIZSe films depends on the processing regimes. The thin films had absorption coefficient α of the order α =10 4 cm −1 and the band gap energy E g was found to be in the range of E g =0.99–1.24 eV with increasing Zn content. Some experimental efforts have been made for fabricating Al–Ni/ZnO/CdS/CIZSe/Ti–Mo/glass solar cells.