WEAK-LOCALIZATION IN n- AND p-TYPE FILMS OF Pb1-xEuxTe

We investigated the magnetotransport properties of n- and p-type films of Pb1-xEuxTe grown by molecular beam epitaxy, with Eu concentrations close to the Metal-Insulator transition. The n-type sample shows a negative magnetoresistance which magnitude increases continually as the temperature is lowered. On the other hand, for the p-type sample, a negative magnetoresistance can be observed only for temperatures below 7 K. Comparing the magnetoresistance of both samples we show that the scattering mechanism should have a different origin.