P‐25: Super Low Temperature Doping of Phosphorus to Poly‐Si Thin Films Using XeF Excimer Laser Irradiation in Phosphoric Acid Solution

In this paper, we report on super low temperature doping of phosphorus to poly-Si thin films using XeF excimer laser irradiation in a phosphoric acid solution. In this method, the implantation of P atoms and dopant activation can be performed simultaneously. We prepared poly-Si films with a thickness of 50 nm, and these films were crystallized using XeF excimer laser annealing. After laser doping, the concentration of P atoms in the poly-Si films was approximately 3.5 × 1018 cm−3, and the resistance of the poly-Si films decreased by approximately 0.003 times as compared with that before laser doping.