Examination of the local structure in composite and low dimensional semiconductor by X-ray Absorption Spectroscopy

Examination of the local structure in composite and low dimension semiconductor by X-ray Absorption Spectroscopy K. Lawniczak-Jablonska*, I.N. Demchenko , E. Piskorska, A. Wolska, E. Talik, 1 D.N. Zakharov, 2 and Z. Liliental-Weber 2 Institute of Physics Polish Academy of Science, Al. Lotnikow 32/46, 02-668 Warsaw, Poland Institute of Physics, University of Silesia, ul. Uniwersytecka 4, 40-007 Katowice, Poland Lawrence Berkeley National Laboratory, m/s 62R203-8255, Berkeley, CA 94720, USA Abstract X-ray absorption methods have been successfully used to obtain quantitative information about local atomic composition of two different materials. X-ray Absorption Near Edge Structure analysis and X-Ray Photoelectron Spectroscopy allowed us to determine seven chemical compounds and their concentrations in c-BN composite. Use of Extended X-ray Absorption Fine Structure in combination with Transmission Electron Microscopy enabled us to determine the composition and size of buried Ge quantum dots. It was found that the quantum dots consisted out of pure Ge core covered by 1-2 monolayers of a layer rich in Si. PACS: 61.10.Ht, 68.37.Lp, 81.05.Je, 79.60.Fr Key words: EXAFS, XANES, XPS, TEM, composites, nanostructure Corresponding author: jablo@ifpan.edu.pl