Study on radio-frequency damage effects of electro-explosive device

The radio-frequency damage effects of electro-explosive device are considered based on the transmission line model and the non-Fourier heat conduction model. The detector voltage method for high frequency induced voltage and optic radiation method for transient temperature rise are considered. The useful conclusions that the detector voltage reaches maximum when the length of pin is an integral number of the half wave length and the temperature rise process of electro-explosive device is a strong-transient-state heat conduction process when the radio-frequency damage power is high are drawn by means of numerical calculation and the experiment. The results are useful for radio-frequency damage effect analysis of electro-explosive device.