Light emitting diode using double metal electrode layer, and method for manufacturing the diode

PURPOSE: A light emitting diode using a double metal electrode layer, and a method for manufacturing the same are provided to improve ohmic contact and hydrogen reactivity by using two metal electrodes as light emitting diode electrodes. CONSTITUTION: A semiconductor layer (120) is formed in the upper surface of a substrate (110). An active layer (130) is formed in the upper surface of the semiconductor layer. A second semiconductor layer (140) is formed in the upper surface of the active layer. A transparent electrode layer (150) is formed in the upper surface of the second semiconductor layer. A first metal electrode layer (160) is formed in the upper surface of the transparent electrode layer. A second metal electrode layer (170) is formed in the upper surface of the first metal electrode layer.