Study of Dynamic Simulation for Thermal-Electronic Logic Circuits

Emerging devices and materials in computing industry are recently of great interest because classical silicon-based circuit development is saturating due to scaling limits. Thermal-electronic logic circuit (TELC) concept is a promising approach to enhance conventional CMOS circuits or even replace them. Semiconductor-to-metal transition (SMT) of vanadium dioxide (VO 2 ) is the main part of TELC as it allows transmission and control of information flow both electrically and thermally. The first TELC inverter is introduced in this article, dynamic simulations are performed to test its behavior and relation between propagation delay and input voltage is demonstrated. A new phase transition model is used to upgrade our SUNRED simulator. This new version is accurate and proved to be suitable for dynamic simulations. This article presents first dynamic simulation of SMT material.