Effect of Electron Beam Excitation Pulses on the Lasing Threshold of the Laser Semiconductor Target

The dependence of the threshold intensity of the electron beam (EB) on the pulse shape and duration upon lasing excitation in a laser semiconductor target (ST) is considered. It is shown that a minimum EB threshold intensity can be reached before the pulse end in the case of sinusoidal pulses. The possibility of decreasing the EB threshold intensity and laser radiation duration under the ST excitation by a train of high-frequency EB pulses. The results obtained can be used in calculating the EB threshold intensity, to excite generation of subnanosecond laser radiation pulses for the time t ≤ τ, where τ is the lifetime of excess carriers in the ST.