Strain enhanced DC-RF performance of 0.13 mu m nMOSFETs on flexible plastic substrate

A 14.3% saturation current I/sub d,sat/ improvement and 0.75 dB minimum noise figure (NF/sub min/) at 10 GHz were measured by applying /spl sim/0.7% tensile strain for 16 finger, 0.13 /spl mu/m RF MOSFETs with thin-body (40 /spl mu/m) substrate mounted on plastic. These excellent results for mechanical-strain on DC-RF MOSFETs are better than those of SiN-capped 90 nm strained-Si nMOSFETs and consistent with device simulations.