Computer Investigation of the Influence of Metal Contact Inhomogenees on Resistive Switching in a Heterostructure Based on Bismuth Selenide

The effect of nanoscale inhomogeneities (protrusions) of a metal contact on bipolar resistive switching in a planar heterostructure based on bismuth selenide is investigated in the previously proposed model of the critical field. The numerical calculations show that such inhomogeneities, depending on their shape, size, and location relative to the edge of the contact, can significantly change the high and low resistive states of the given heterostructure, and also noticeably affect the voltage required for switching between these states.