Low‐frequency noise measurements on n‐InGaAs/p‐InP junction field‐effect transistor structures

Deep level analysis in the ohmic regime of ungated n‐InGaAs/p‐InP junction field‐effect transistor structures was made by low‐frequency noise measurements. The noise spectra exhibit two deep trap levels in the n‐InGaAs channel with activation energies of 0.49 and 0.37 eV. The related capture cross sections are 7×10−15 and 4×10−16 cm2, respectively.