Polymer-based organic field-effect transistor using offset printed source/drain structures

Organic field-effect transistors were fabricated using offset printed source/drain structures. Interdigitated electrode structures were printed with a poly(3,4–ethylenedioxythiophene) (PEDOT) formulation. A polymeric semiconductor polytriarylamine and different insulator layers were deposited by spin coating. A field-effect mobility of 3×10−3cm2V−1s−1 and on/off ratio of about 103 was achieved, making it possible to produce digital logic elements.