Radiation damage of oxygenated silicon diodes by 27 MeV protons

The radiation damage induced by 27 MeV protons has been studied on diodes fabricated from standard and oxygen-enriched FZ substrates. Measurements confirm that the damage constant α is insensitive to the oxygen concentration whereas the acceptor creation rate parameter β is lower for oxygenated diodes. However, the effect is significantly smaller than that observed with high-energy protons, but somewhat higher than that by reactor neutrons. Data have been collected at the irradiation facility of the Tandem at the INFN Laboratories of Legnaro.