Structural and Electrical Characteristics of Pb(Zr 0.53 ,Ti 0.47 )O 3 Thin Films Deposited on Si (100) Substrates

Pb(Zr0.53, Ti0.47)O3 (PZT) films were directly deposited on Si substrates without a buffer layer by pulsed laser deposition. Only (110)-oriented PZT peaks (other than Si substrate peaks) were observed from the XRD data. The electrical properties of the PZT/Si capacitor were characterized in terms of both the capacitance versus voltage (C–V) and current versus voltage (I–V) measurements. The clockwise trace of the C–V curve shows ferroelectric polarization switching, as is expected. From the I–V curves, the Schottky emission and space-charge-limited-current behaviour are found to be the mainly leakage current mechanism in a certain electric field range in the negative and positive bias, respectively.