DEGRADATION OF THIN-FILMS OF YBA2CU3O7 BY ANNEALING IN AIR AND IN VACUUM

1995 
The degradation of epitaxial thin films of YBa2Cu3O7 has been studied as a function of annealing temperature in air and in vacuum; some samples had an evaporated overlayer of CaF2. Degradation was monitored by the measurement of electrical properties after consecutive 30-min annealing treatments. The room-temperature resistance registered significant increases for all samples after annealing at temperatures above about 200°C; the critical current density at 77 K was degraded for annealing temperatures ≥400°C in air, and ≥200–250°C in vacuum. By annealing in oxygen at 550°C, electrical properties were restored in degraded bare YBCO samples annealed in vacuum, but not for those annealed in air.
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