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Defect Reduction in Sublimation Grown Silicon Carbide Crystals by Adjustment of Thermal Boundary Conditions
Defect Reduction in Sublimation Grown Silicon Carbide Crystals by Adjustment of Thermal Boundary Conditions
2001
Erwin Schmitt
Michael Rasp
Arnd Dietrich Weber
M. Kölbl
R Eckstein
L. Kadinski
M. Selder
Keywords:
Thermal
Composite material
Metallurgy
Sublimation (phase transition)
Crystal
Materials science
Boundary value problem
Silicon carbide
Supersaturation
thermal boundary conditions
Correction
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