MOVPE growth of a monolithic VCSEL at 1.56 μm in the InGaAlAs-InAlAs system lattice matched to InP

The first demonstration of a one-step-growth vertical-cavity surface-emitting laser (VCSEL) at 1.56 /spl mu/m by low-pressure metal-organic vapor phase epitaxy in the InGaAlAs (/spl lambda//sub gap/=1.43 /spl mu/m)-InAlAs system lattice matched to InP is presented. The VCSEL's threshold current density was 7.5 kA/cm/sup 2/ and pulsed lasing had been obtained up to +55/spl deg/C for 45-/spl mu/m diameter proton implanted devices. This material system represents a high potential for continuous-wave VCSELs at 1.55-/spl mu/m wavelength using a simple approach for large-scale industrial production.