Growth Characteristics and Properties of Tin-Doped Indium Oxide Thin Films as a Function of Oxygen Pressure When Prepared by E-beam Evaporation

The Indium Tin Oxide (ITO) thin films were prepared by E-beam evaporation at oxygen pressure ranging from 1 × 10−4 to 1 × 10−3 Torr. The structure was analyzed by X-ray diffraction and the grain size was evaluated by Scherrer formula. The resistivity and transmittance were measured by 4-probe method and UV-Visible spectrophotometer, respectively. The crystallinity of ITO films increases with oxygen pressure increasing which also increase the intensity of (440). The grain size of ITO films increased with the oxygen pressure increasing. The resistivity decreased with oxygen pressure increasing, however, the transmittance increased. These results suggested that the deposition parameter of oxygen pressure plays an important role in ITO thin film preparation by E-bean evaporation.