Anomalous Hall effect in graphene coupled to a layered magnetic semiconductor

Graphene is favorable to realize topological nontrivial state by introducing spin-orbit coupling and exchange field through the proximity effect. The recent discovery of van der Waals magnets allows great proximitized modulation on graphene by building atomically clean heterostructures. Here, we realize anomalous Hall effect in graphene coupling with a layered magnetic material, ${\mathrm{Fe}}_{x}{\mathrm{Sn}}_{1\ensuremath{-}x}{\mathrm{S}}_{2}$. The anomalous Hall resistance and the carrier density show a nonmonotonous dependence on the back-gate voltage, indicating emergence of band-structure transformation. Furthermore, low-field quantum interference measurement shows the enhancement of spin-orbit coupling (SOC) in the heterostructure. Our findings confirm that graphene coupling to ${\mathrm{Fe}}_{x}{\mathrm{Sn}}_{1\ensuremath{-}x}{\mathrm{S}}_{2}$ is an ideal platform that is likely to introduce a strong exchange field and SOC simultaneously, which has outstanding potential in realizing topological nontrivial states and spintronics.