High efficient N-type interdigitated back contact silicon solar cells with screen-printed al-alloyed emitter

N-type interdigitated back contact (IBC) silicon solar cells have been successfully applied industrially with high-efficiency of 23.4% by Sunpower and are being investigated by several research groups. However, the formation of p + emitter is still an issue. A traditional method is boron diffusion which needs high temperature processes to form the emitter and to remove the silicate glass boron skin. In recent years, people have shown excellent results on n-type front contact rear junction cells with a screen-printed Al-alloyed emitter. In this work, we demonstrate the use of such emitters on n-type IBC silicon solar cells.