The photoluminescence of SiCN thin films prepared by C+ implantation into alpha-SiNx:H

SiCN thin films were prepared by high-dosage (2 x 10(17) cm(-2)) C+ ion implantation into alpha-SiNx:H films. The prepared films were then processed by thermal annealing for 2 h at 800 degrees C, 1000 degrees C and 1200 degrees C respectively. The composi