MEMS piezoresistive type acceleration sensor and processing method for the same

The invention discloses an MEMS piezoresistive type acceleration sensor, comprising a substrate silicon and a top layer silicon used for forming the acceleration sensor; the substrate silicon and the top layer silicon are oppositely arranged in an insulation manner; the side of the top layer silicon which is away from the substrate silicon is a wafer surface; the position of the waver surface on the outside of the acceleration sensor is provided with an electrical isolation groove; the top layer silicon is provided with a conductive structure arranged on the top layer silicon and communicated with the wafer surface; the substrate silicon and the acceleration sensor constitute a mechanical movable capacitance structure; the MEMS piezoresistive type acceleration sensor enables the acceleration sensor to produce deformation through the static electricity and cause the resistance value of the piezoresistive structure to change and to generate output signals. As a result, the wafer level self-detection function is realized and the sensor detection cost is reduced. The invention also discloses a processing method for the MEMS piezoresistive type acceleration sensor, which is used for processing the MEMS piezoresistive acceleration sensor.