Preventing single event latchup with deep P-well on P-substrate

We propose a method that prevents single event latchup (SEL) using deep P-well on P-substrate. To confirm the effectiveness of the proposed method, SEL and single event upset (SEU) are evaluated for three well configurations; double-well, ordinary triple-well and the proposed deep P-well on P-substrate. Neutron irradiation test shows that the proposed method achieves SEL prevention without SEU increase.