Research possibilities of Silvaco TCAD for physical simulation of gallium nitride power transistor

The article introduces the benefits and application features of Silvaco TCAD tools. The possibility of using Device Simulation Framework – ATLAS for GaN power transistor modeling demonstrated. The band diagram of the AlGaN/GaN heterostructure of power transistor built, taking into consideration the polarization processes and surface traps as a source of the electrons in two dimensional electron gas (2DEG). Furthermore, the self-consistent system of Schrodinger – Poisson equations solved to calculate the profile of carrier concentration in the transistor structure. Simulation allows prediction of basic device parameters before its fabrication.