Method of inspecting a wafer, the focused ion beam apparatus and a transmission electron beam apparatus

Semiconductor devices, imaging devices, in the manufacture of such a display device is in-line inspection method and apparatus for wafer deposition MakumakuAtsu, pattern size, the overlay accuracy pattern, and the conductive state of the hole inspected in manufacturing developing . The 'TEM / STEM sample observation by' combined with 'sample preparation by FIB device', in FIB apparatus, previously accordance registered sample preparation recipes (37), and the specified plurality of locations on the wafer and the target, a sample cut out positioning the location automatically, it cuts out samples automatically, with mounted automatically to the observation sample holder using a cut sample in TEM or STEM, create a recipe (88) for observing the sample by TEM or STEM to, while in TEM or STEM, according observation recipe inputted to the created TEM or STEM in FIB apparatus, and for a plurality of samples mounted on observation specimen holder, Shi automatically align the observation area to obtain the acquired observational data a predetermined sample image.