Dosimetric Assessment of Mono-Crystalline CVD Diamonds Exposed to Beta and Ultraviolet Radiation

Polycrystalline and mono-crystalline CVD diamonds have been investigated in relation to radiation dosimetry applications. In this work we report results on the thermoluminescence (TL), afterglow (AG) and dosimetric performance on two mono-crystalline CVD diamonds containing boron and silicon as doping materials. The samples were exposed to beta (Sr90/Y90) in the dose range of 0.07-8.26 Gy and UV light in the range of 200-400 nm, followed in both cases, by TL and AG read-outs. The boron doped sample exhibited one main TL peak at 130 °C and some overlapped peaks around 250 °C and the silicon doped samples exhibited two TL peaks around 148 and 286 °C after the crystals were subjected to beta radiation. UV radiation exposed samples showed two main TL peaks around 139 oC for boron doped, with overlapped components in the high temperature side, and at 220 and 355 oC for silicon doped samples. The integrated TL and AG intensities reached saturation around to 3.0 and 1.0 Gy in boron and silicon doped samples, respectively. The AG signal from boron doped samples reached saturation for around 60 s of 230 nm UV light irradiation and the silicon doped sample showed a linear response up to 10 minutes of 300 nm UV exposure with no apparent saturation for higher irradiation times. The TL/AG behavior of the present CVD diamond indicates the promising applications of these materials as TL/AG dosimeter for ionizing and UV radiation.