Oxidation of Silicon and Nitridaticn of SiO 2 by Rapid Thermal Processes

Thin gate oxides of 30 to 150 A have been grown in a rapid thermal annealing machine. Experiments were performed in the temperature range of 1000 to 1250 ° C for an oxidation time of 5 to 60 s. The fairly extensive kinetics data show that linear growth occurs with an activation energy Ea of 1.4 eV for the 5-60 s period. The oxide homogeneity was evaluated and gave a value of 1.9 A for a mean oxide thickness of 102 A. The electrical characteristics of Al-gate capacitors were assessed by C-V and I-V measurements. Rapid thermal nitridation of a 96 A SiO 2 has been performed at a temperature of 1150 ° C for a nitridaticn time up to 150 s. An average breakdown field of 14.6 MV/cm has been obtained for MIS capacitors. High resolution TEM show a good interface Sio X N Y -Si.