Crystal growth apparatus and a single crystal growth method of a single-zone temperature zone

The present invention discloses a single crystal growth temperature zones for a vertical gradient growth apparatus and a single crystal growth method condensation zone growth method. The present invention utilizes this crystal growth apparatus is first grown crystal growth starting material was charged in ampoules, and then test the empty furnace temperature field distribution when an ampoule is not loaded, the test result field empty furnace temperature profile and the crystal growth conditions relative to the desired temperature field determining a placement region binding growth ampoule into the ampoule, and then adjusted according to the real-time temperature temperature field after field testing to meet the requirements of the crystal growth process, so that an incubation period sufficiently melt crystals, and cooling process is provided, the crystal growth starts . The method of the present invention can greatly reduce the cost of a single crystal growth apparatus, simplify the crystal growth process, to achieve a controllable temperature field gradient furnace structure through a simple design, can meet the needs of a variety of crystal growth, and by real-time temperature adjustment may reduce the disturbance of the ampoules into the temperature field.