Synthesis, optical and transport properties of single-crystal N-deficient InN nanowires

Abstract We report the synthesis, optical and transport properties of N-deficient InN nanowires (In:N=1:0.82). It is found that these nanowires exhibited a typical metallic conduction behavior over the temperature range from 5 to 300 K, without any sign of the transition from metal to semiconductor. Raman scattering measurement showed more significant broadening of linewidth. These results can be understood based on the N-deficient defects and other defects or impurities in the samples.