High frequency noise and harmonic distortion of 28 nm n and p type MOSFETs

The standard DC and RF and characteristics were measured for the 28 nm p- and n- type MOSFETs. The charge based compact model EKV3 parameters were extracted and verified against measured data. Noise parameters for both n- and p-MOSFETs were measured and analyzed in terms of gate induced noise correlation with the drain current noise, short channel effects related noise. The PRC noise model as well as drain current and gate current noise spectral densities were extracted and analyzed. Measured harmonic distortion at 2.5, 5 and 8 GHz exhibits excellent linearity and in a perfect agreement with EKV3.