Fundamental properties of ultrathin SOI MOSFETs fabricated by electron‐beam anneal recrystallization

Thin-film SOI MOSFETs made in completely depleted SOI films were fabricated by electron-beam annealing and their electrical properties were compared with those of conventional SOI MOSFETs. The threshold voltage agreed with the calculated value. With complete depletion of the SOI film, the threshold voltage decreased toward the value determined by the work function difference between the gate material and SOI film as the film thickness decreased. The low field mobility increased with the depletion of the SOI film. When the SOI film was 500 A thick, the mobility exceeded that of a bulk MOS device fabricated with the same doping concentration. The current overshoot during switching in the thin-film SOI device was too small to observe.