High Power Microstrip Non-Foster Class E GaN HEMT Amplifier

This paper proposes high power microstrip non-Foster Class E GaN HEMT amplifier. The power amplifier (PA) was designed based on Cree CGHV40030FP GaN HEMT biased at drain supply voltage of 50 V and cut-off gate voltage of −3 V. Non-Foster circuit has been used in the input matching network to generate the negative capacitance required to cancel out the gate-source capacitance of the power transistor. The PA operates from 3.1 to 3.3 GHz at 3.2 GHz center frequency. The PA has 57.6% drain efficiency, 52.9% PAE, 42.5 dBm output power and 10.5 dB transducer power gain at 32 dBm input power.