Process for cleaning anodized metal surfaces in the manufacture of interconnect networks and inserts for such networks.

This invention relates to a method for cleaning oxidized metallized surfaces implemented in the manufacture of wafers for interconnection networks, comprising at least: - a first metallized conducting layer, - a dielectric layer deposited on the metallized layer and then etched to expose the surfaces to be metallized or contact holes, and - one second metallized layer deposited on the etched surface, characterized in that the etched wafers are processed using microwave multipolar plasma under hydrogen before the deposition of the second metallized layer. It also relates to wafers for interconnection networks in which the metallized surfaces were cleaned according to the invention.