Characterization of multicolor type-II InAs/GaSb strained-layer superlattice photodetectors for use in astronomical observation
2010
We report on the testing of a set of InAs/GaSb multicolor strained-layer superlattice photodetectors and Dotin-
Well detectors grown with InAs dots in InGaAs/GaAs wells fabricated by the Center for High Technology
Materials at the University of New Mexico. These devices are 2-color devices sensitive to near-IR and mid-IR
wavelengths. The wavelength sensitivities of these devices are a function of the applied forward and reverse bias.
We present measurements of the dark current and relative spectral response of these photodetectors measured
at both cryogenic and room temperatures.
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