Thermal Stability of Defect Centers in n- and p-Type 4H-SiC Epilayers Generated by Irradiation with High-Energy Electrons

This paper comprises a systematic study of the thermal stability of defect centers observed in n- and p-type 4H-SiC by deep level transient spectroscopy (DLTS); the defects are generated by irradiation with high-energy electrons of 170 keV or 1 MeV.