Top-down lithographic method for inducing strain in carbon nanotubes
2009
We demonstrate a method for inducing strain in carbon nanotubes using standard lithographic techniques. In this work, aligned nanotubes are partially suspended over trenches made by chemical etching. Strain-induced downshifts as high as 31 cm−1 are observed in the Raman spectra, roughly corresponding to 1.1% strain. We also observe significant shifts in the resonant transition energy Eii and an irreversible increase in the D band Raman intensity. The strains demonstrated using this technique are capable of creating significant bandgaps in metallic nanotubes, greater than kBT at room temperature, thereby making it possible to convert metallic nanotubes into semiconductors.
Keywords:
- Carbon nanobud
- Optical properties of carbon nanotubes
- Mechanical properties of carbon nanotubes
- Selective chemistry of single-walled nanotubes
- Raman spectroscopy
- Band gap
- Nuclear magnetic resonance
- Carbon nanotube
- Strain (chemistry)
- Physics
- Isotropic etching
- Optoelectronics
- Nanotechnology
- Condensed matter physics
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