Formation process of high-purity Ge-on-insulator layers by Ge-condensation technique

Formation process of Ge-on-insulator (GOI) layers by Ge condensation with very high purity of Ge is clarified in terms of diffusion behaviors of Si and Ge in a SiGe layer. It is shown that the diffusion behavior affects the Ge condensation process, and the purity of GOI layer can be determined by the relation between oxidation and diffusion of Si. Experimental results support a model of GOI formation that the selective oxidation of Si in SiGe continues until the formation of a GOI layer with the residual Si fraction of less than 0.01%. Based on this model, we quantitatively clarify the reason why GOI layers can reach very low residual Si fraction without oxidizing Ge by calculating the diffusion behavior of Si during the Ge condensation process. As a result, we have found that the thermal diffusion of Si is sufficiently fast so that the selective oxidation of Si can continue during the GOI formation process until the averaged residual Si fraction in the SGOI layer becomes lower than 0.03%, which is essent...