Evolution of InAs islands in the Stranski-Krastanow mode of InAs/GaAs(001) fabricated using molecular beam epitaxy
2007
Based on step-by-step observation using atomic force microscope, two distinctive successive phases were distinguished in accordance with evolution of the three-dimensional InAs islands during the Stranski-Krastanow mode of the InAs/GaAs(001) system fabricated using molecular-beam epitaxy. The initial phase is consistent with a power law, and the latter phase is a comparatively gradual one.
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