A semiconductor device having a metal gate electrode is formed on an annealed gate dielectric layer, high-k

A method, comprising: Providing a substrate; Forming a gate dielectric layer having a high k value on said substrate; Forming a cap layer on the gate dielectric layer of high k-value; Annealing the gate dielectric layer of high k-value to form an annealed gate dielectric layer having a high k-value; Removing the top layer to expose the annealed gate dielectric layer having a high k-value; and Forming a metal layer on the annealed high-k gate dielectric layer value.